RA07M1317MSA

RA07M1317MSA, 7.2V, 6.7W, MITSUBISHI, DIP, MOSFET Amplifier, 4 V

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Price:: US $15.48~18.76 / piece [Get Latest Price]

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Qty (lots)	Price/lot
100 ~ 500 :	18.76 / Piece
500 ~ 1000 :	17.13 / Piece
1000 ~ 1500 :	15.48 / Piece

PartNumber:: RA07M1317MSA

Brand:: MITSUBISHI Electronics - MITSUBISHI | D/C: 08+

Availability:: Supply Ability: 10000/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-07-29

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Part Number:RA07M1317MSA
US $15.48 - 18.76
Quantity:

piece

Product Summary

The RA07M1317MSA is a 6.7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 135- to175-MHz range.The battery can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases.With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The nominal output power becomes available at 3V (typical) and 3.5V (maximum). AtVGG=3.5V, the typical gate current is 1 mA.This module is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the outputpower with the input power.

Parametrics

RA07M1317MSA absolute maximum ratings: (1)On the conditions of VGG<3.5V, VDD Drain Voltage: 9.2 V; (2)On the conditions of VDD<7.2V, Pin=0mW, VGG Gate Voltage: 4 V; (3)On the conditions of f=135-175MHz,ZG=ZL=50Ω, Pin Input Power: 30 mW; (4)On the conditions of f=400-470MHz, ZG=ZL=50Ω, Pout Output Power: 10 W; (5)Tcase(OP) Operation Case Temperature Range: -30 to +110 ℃; (6)Tstg Storage Temperature Range: -40 to +110 ℃.

Features

RA07M1317MSA features: (1)Enhancement-Mode MOSFET Transistors(IDD≈0 @ VDD=7.2V, VGG=0V); (2)Pout>6.7W @ VDD=7.2V, VGG=3.5V, Pin=20mW; (3)ηT>5% @ Pout=6W (VGG control), VDD=7.2V, Pin=20mW; (4)Broadband Frequency Range: 135-175MHz; (5)Low-Power Control Current IGG=1mA (typ) at VGG=3.5V; (6)Module Size: 30 x 9.6 x 5.3 mm; (7)Linear operation is possible by setting the quiescent draincurrent with the gate voltage and controlling the output powerwith the input power.