Product Summary

The RA07M4452M is a 7-watt RF MOSFET Amplifier Module for 7.2-volt portable radios that operate in the 440- to 520-MHz range. The RA07M4452M can be connected directly to the drain of the enhancement-mode MOSFET transistors. Without the gate voltage (VGG=0V), only a small leakage current flows into the drain and the RF input signal attenuates up to 60 dB. The output power and drain current increase as the gate voltage increases. With a gate voltage around 2.5V (minimum), output power and drain current increases substantially. The RA07M4452M nominal output power becomes available at 3V (typical) and 3.5V (maximum). At VGG=3.5V, the typical gate current is 1 mA. The RA07M4452M is designed for non-linear FM modulation, but may also be used for linear modulation by setting the drain quiescent current with the gate voltage and controlling the output power with the input power.

Parametrics

RA07M4452M absolute maximum ratings: (1)VDD, Drain Voltage: 9.2 V at VGG<3.5V; (2)VGG, Gate Voltage: 4V at VDD<7.2V, Pin=0mW; (3)Pin, Input Power: 70mW; (4)Pout, Output Power: 10W at f=440-520MHz, ZG=ZL=50Ω; (5)Tcase(OP), Operation Case Temperature Range: -30 to +90℃; (6)Tstg, Storage Temperature Range: -40 to +110℃.

Features

RA07M4452M features: (1)Enhancement-Mode MOSFET Transistors (IDD 0 @ VDD=7.2V, VGG=0V); (2)Pout>7W @ VDD=7.2V, VGG=3.5V, Pin=50mW; (3)T>40% @ Pout=6.5W (VGG control), VDD=7.2V, Pin=50mW; (4)Broadband Frequency Range: 440-520MHz; (5)Low-Power Control Current IGG=1mA (typ) at VGG=3.5V; (6)Module Size: 30 x 10 x 5.4 mm; (7)Linear operation is possible by setting the quiescent drain current with the gate voltage and controlling the output power with the input power.

Diagrams

RA07M4452M block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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RA07M4452M
RA07M4452M
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Data Sheet
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RA07M4452MSA
RA07M4452MSA
Other

Data Sheet
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