(Hong Kong)
Product Summary
The 2n3055 is a complementary silicon power transistor. The 2n3055 is designed for use in general-purpose amplifier and swtiching applications.
Parametrics
2n3055 absolute maximum ratings: (1) collector-emitter voltage VCEO: 60V; (2) collector-emitter voltage VCER: 70V; (3) collector-base voltage VCBO: 100V; (4) Emitter-base voltage VEBO: 7V; (5) Collector current-continuous Ic: 15A; (6) base current IB: 7A; (7) total power dissipation@Tc=25°C debrate above 25°C PD: 115W, 0.657W/°C; (8) Operating and storage junction temperature range TJ, Tstg: -65 to +200°C.
Features
2n3055 features: (1) power dissipation-PD=115W@Tc=25°C; (2) DC current gain hFE=20-70@Ic=4A; (3) VCE (sat) =1.1V (Max.) @Ic=4A, Ib=400mA.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 2N3055A |
ON Semiconductor |
Transistors Bipolar (BJT) 15A 60V 115W NPN |
Data Sheet |
Negotiable |
|
||||||||||||
|
2N3055AG |
ON Semiconductor |
Transistors Bipolar (BJT) 15A 60V 115W NPN |
Data Sheet |
|
|
||||||||||||
|
2N3055G |
ON Semiconductor |
Transistors Bipolar (BJT) NPN 15A 60V |
Data Sheet |
|
|
||||||||||||
|
2N3055H |
ON Semiconductor |
Transistors Bipolar (BJT) 15A 60V 115W NPN |
Data Sheet |
Negotiable |
|
||||||||||||
|
2N3055HG |
ON Semiconductor |
Transistors Bipolar (BJT) 15A 60V 115W NPN |
Data Sheet |
Negotiable |
|
||||||||||||
 |
2N3055E |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
|
2N3055_MJ2955 |
Other |
|
Data Sheet |
Negotiable |
|
||||||||||||
 |
2N3055 |
STMicroelectronics |
Transistors Bipolar (BJT) NPN Power Switching |
Data Sheet |
|
|
||||||||||||
