Product Summary

The 2sk4107 is a Toshiba field effect transistor. Application of the 2sk4107 includes Switching Regulator.

Parametrics

2sk4107 absolute maximum ratings: (1) Drain-source voltage VDSS: 500V; (2) Drain-gate voltage (RGS=20kΩ) VDGR: 500V; (3) Gate-source voltage VGSS: ±30V; (4) Drain current DC: 15A, IDP: 60A (Pulse) ; (5) Drain power dissipation (Tc = 25°C) , PD: 150W; (6) Single pulse avalanche energy EAS: 765mJ; (7) Avalanche current IAR: 15A; (8) Repetitive avalanche energy EAR: 15mJ; (9) Channel temperature Tch: 150°C; (10) Storage temperature range Tstg: -55 to 150°C.

Features

2sk4107 features: (1) Low drain-source ON resistance: RDS (ON) =0.33Ω; (2) High forward transfer admittance: |Yfs| = 8.5S (typ.) ; (3) Low leakage current: IDSS= 100μA (VDS= 500V) ; (4) Enhancement-mode: Vth= 2.0~4.0 V (VDS= 10 V, ID= 1 mA) .

Diagrams

2sk4107 circuit

Image Part No Mfg Description Data Sheet Download Pricing
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2SK4107
2SK4107

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Data Sheet

Negotiable 
2SK4107(F,T)
2SK4107(F,T)

Toshiba

MOSFET N-Ch FET VDSS 500V RDS 0.33 Ohm Yfs 8.5

Data Sheet

Negotiable