(Hong Kong)
Product Summary
The AM29LV160MB-90EI is a 16 Mbit, 3.0 Volt-only Flash memory organized as 2,097,152 bytes or 1,048,576 words. The device is offered in a 48-ball Fine-pitch BGA, 64-ball Fortified BGA, and 48-pin TSOP packages. The word-wide data (x16) appears on DQ15–DQ0; the byte-wide (x8) data appears on DQ7–DQ0. The AM29LV160MB-90EI requires only a single 3.0 volt power supply for both read and write functions, designed to be programmed in-system with the standard system 3.0 volt VCC supply. The device can also be programmed in standard EPROM programmers. The AM29LV160MB-90EI offers access times of 70, 85, 90, and 100 ns. To eliminate bus contention the device contains separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.
Parametrics
AM29LV160MB-90EI absolute maximum ratings: (1)Storage Temperature, Plastic Packages.: –65 to +150℃; (2)Ambient Temperature with Power Applied: –65 to +125℃; (3)Voltage with Respect to Ground VCC: –0.5 V to +4.0 V; (4)A9, OE#, and RESET#: –0.5 V to +12.5 V; All other pins: –0.5 V to VCC+0.5 V; (5)Output Short Circuit Current: 200 mA.
Features
AM29LV160MB-90EI features: (1)Program Suspend & Resume: read other sectors before programming operation is completed; (2)Erase Suspend & Resume: read/program other sectors before an erase operation is completed; (3)Data# polling & toggle bits provide status; (4)Unlock Bypass Program command reduces overall multiple-word programming time; (5)CFI (Common Flash Interface) compliant: allows host system to identify and accommodate multiple flash devices; (6)Sector Protection: hardware-level method of preventing write operations within a sector; (7)Temporary Sector Unprotect: VID-level method of changing code in locked sectors; (8)Hardware reset input (RESET#) resets device; (9)Ready/Busy# output (RY/BY#) indicates program or erase cycle completion.
Diagrams
