(Hong Kong)
Product Summary
The AM29LV641DH-90RFI is a 64 Mbit, 3.0 Volt (3.0 V to 3.6 V) single power supply flash memory device organized as 4,194,304 words. Data appears on DQ0-DQ15. The AM29LV641DH-90RFI is designed to be programmed in-system with the standard system 3.0 volt VCC supply. A 12.0 volt VPP is not required for program or erase operations. The device can also be programmed in standard EPROM programmers. Access times of 90 and 120 ns are available for applications where VIO ≥ VCC. Access times of 100 and 120 ns are available for applications where VIO < VCC. The AM29LV641DH-90RFI is offered in 48-pin TSOP, 56-pin SSOP, 63-ball Fine-Pitch BGA and 64-ball Fortified BGA packages. To eliminate bus contention each device of the AM29LV641DH-90RFI has separate chip enable (CE#), write enable (WE#) and output enable (OE#) controls.
Parametrics
AM29LV641DH-90RFI absolute maximum ratings: (1)Storage Temperature Plastic Packages: –65℃ to +150℃; (2)Ambient Temperature with Power Applied: –65℃ to +125℃; (3)Voltage with Respect to Ground VCC: –0.5 V to +4.0 V; (4)VIO: –0.5 V to +5.5 V; (5)A9, OE#, ACC, and RESET: –0.5 V to +12.5 V; (6)All other pins: –0.5 V to VCC +0.5 V; (7)Output Short Circuit Current: 200 mA.
Features
AM29LV641DH-90RFI features: (1)Single power supply operation; (2)VersatileIO TM control; (3)High performance; (4)Manufactured on 0.23 μm process technology; (5)CFI (Common Flash Interface) compliant; (6)SecSi (Secured Silicon) Sector region; (7)Ultra low power consumption (typical values at 3.0 V, 5 MHz); (8)Flexible sector architecture; (9)Sector Protection; (10)Embedded Algorithms; (11)Compatibility with JEDEC standards; (12)Minimum 1 million erase cycle guarantee per sector.
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