Product Summary
The AS7C1024B-12TC is a high performance CMOS 1,048,576-bit Static Random Access Memory (SRAM). The device is organized as 131,072 words × 8 bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired.
Parametrics
AS7C1024B-12TC absolute maximum ratings: (1)Voltage on VCC relative to GND: -0.5V to +7.0V; (2)Voltage on any pin relative to GND: -0.5V to VCC+0.5V; (3)Power dissipation PD: 1W; (4)Storage temperature TSTG: -65℃ to +150℃; (5)Ambient temperature with VCC applied: -55℃ to +125℃; (6)DC current into outputs (low) IOUT: 20mA.
Features
AS7C1024B-12TC features: (1)Organization:131,072 words × 8 bits ; (2)High speed: 10/12/15/20 ns address access time, 5/6/7/8 ns output enable access time; (3)Low power consumption: Active: 605 mW max, Standby: 55 mW max, CMOS DQ; (4)2.0V data retention; (5)Easy memory expansion with CE1, CE2, OE inputs; (6) TTL/LVTTL-compatible, three-state I/O; (7) ESD protection ≥ 2000 volts; (8)Latch-up current > 200 mA.
Diagrams
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![]() AS7C1024B-12TCN |
![]() Alliance Memory |
![]() SRAM 1M Fast 128K x 8 5V Asynch |
![]() Data Sheet |
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![]() AS7C1024B-12TCNTR |
![]() Alliance Memory |
![]() SRAM 1M Fast 128K x 8 5V Asynch |
![]() Data Sheet |
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