(Hong Kong)
Product Summary
The as7c31026-10bc is a high-performance CMOS 1,048,576-bit Static Random Access Memory (SRAM) device. The as7c31026-10bc is organized as 65,536 words x16 bits. The as7c31026-10bc is designed for memory applications where fast data access, low power, and simple interfacing are desired. The as7c31026-10bc is guaranteed not to exceed 28 mW power consumption in CMOS standby mode. also offers 2.0V data retention. The as7c31026-10bc provides multiple center power and ground pins, and separate byte enable controls, allowing individual bytes to be written and read. All chip inputs and outputs of the as7c31026-10bc are TTL-compatible, and operation is from a single 3.3V supply.
Parametrics
as7c31026-10bc absolute maximum ratings: (1) Voltage on Vcc relative to GND Vt1: -0.5 to +5V; (2) Voltage on any pin relative to GND Vt2: -0.5 to Vcc +0.5V; (3) Power dissipation PD: 1W; (4) Storage temperature (plastic) Tstg: -65 to +150°C; (5) Ambient temperature with VCC applied Tbias: -55 to +125°C; (6) DC current into outputs (low) IOUT: 20mA.
Features
as7c31026-10bc features: (1) 3.3V version; (2) Industrial and commercial versions; (3) Organization: 65,536 words x 16 bits; (4) Center power and ground pins for low noise; (5) High speed: 10/12/15/20 ns address access time, 5/6/8/10 ns output enable access time; (6) Low power consumption: ACTIVE; (7) Low power consumption: STANDBY; (8) 2.0V data retention; (9) Easy memory expansion with CE, OE inputs; (10) TTL-compatible, three-state I/O; (11) JEDEC standard packaging; (12) ESD protection≥2000 volts; (13) Latch-up current≥200 mA.
Diagrams
