(Hong Kong)
Product Summary
The ATF-521P8-TR1 is a single-voltage high linearity, low noise E-p HEMT housed in an 8-lead JEDEC standard leadless plastic chip carrier (LPCC[3]) package. The device is ideal as a medium-power, high-linearity amplifier. The ATF-521P8-TR1 operating frequency range is from 50 MHz to 6 GHz. Applications are (1)Front-end LNA Q2 and Q3, driver or pre-driver amplifier for Cellular/ PCS and WCDMA wireless infrastructure; (2)Driver amplifier for WLAN, WLL/RLL and MMDS applications; (3)General purpose discrete E-pHEMT for other high linearity applications.
Parametrics
ATF-521P8-TR1 absolute maximum ratings: (1)Drain –Source Voltage[2]: 7 V; (2)Gate – Source Voltage[2]: -5 to 1 V; (3)Gate Drain Voltage[2]: -5 to 1 V; (4)Drain Current [2]: 500 mA; (5)Gate Current: 46 mA; (6)Total Power Dissipation [3]: 1.5 W; (7)RF Input Power: 27 dBm; (8)Channel Temperature: 150 °C; (9)Storage Temperature: -65 to 150 °C; (10)Thermal Resistance [4]: 45 °C/W .
Features
ATF-521P8-TR1 features: (1)Single voltage operation; (2)High linearity and P1dB; (3)Low noise figure; (4)Excellent uniformity in product specifications; (5)Small package size: 2.0 x 2.0 x 0.75 mm3; (6)Point MTTF > 300 years[2]; (7)MSL-1 and lead-free; (8)Tape-and-reel packaging option available.
Diagrams
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 ATF-521P8-TR1 |
Avago Technologies |
Transistors RF GaAs Transistor GaAs High Linearity |
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ATF-10100 |
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ATF-10170 |
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ATF-10236 |
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ATF-10736 |
Other |
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Negotiable |
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Negotiable |
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