(Hong Kong)
Product Summary
The CY62137VLL-70ZIT is a high-performance CMOS static RAM organized as 128K words by 16 bits. The CY62137VLL-70ZITI device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The devices also has an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW, and WE LOW).
Parametrics
CY62137VLL-70ZIT absolute maximum ratings: (1)storage temperature: –65°c to +150°c; (2)ambient temperature with power applied: –55°c to +125°c; (3)supply voltage to ground potential: –0.5v to +4.6v; (4)dc voltage applied to outputs: in high-z state[4]: –0.5v to vcc + 0.5v; dc input voltage[4]: –0.5v to vcc + 0.5v.; (5)output current into outputs (low): 20 ma; (6)static discharge voltage: > 2001v (per mil-std-883, method 3015); (7)latch-up current: > 200 ma.
Features
CY62137VLL-70ZIT features: (1)temperature ranges: commercial: 0°c to 70°c; industrial: –40°c to 85°c; automotive: –40°c to 125°c.; (2)high speed: 55 ns and 70 ns; (3)wide voltage range: 2.7v–3.6v; (4)ultra-low active, standby power; (5)easy memory expansion with ce and oe features; (6)ttl-compatible inputs and outputs; (7)automatic power-down when deselected; (8)cmos for optimum speed/power; (9)package available in a standard 44-pin tsop type ii (forward pinout)package.
Diagrams
