(Hong Kong)
Product Summary
The CY62147BV18LL-55BAI is a high-performance CMOS static RAM organized as 256K words by 16 bits. The CY62147BV18LL-55BAI device features advanced circuit design to provide ultra-low active current. This is ideal for providing More Battery Life (MoBL) in portable applications such as cellular telephones. The devices also have an automatic power-down feature that significantly reduces power consumption by 80% when addresses are not toggling. The device can also be put into standby mode reducing power consumption by more than 99% when deselected (CE HIGH or both BLE and BHE are HIGH). The input/ output pins (I/O0 through I/O15) are placed in a high-impedance state when: deselected (CE HIGH), outputs are disabled (OE HIGH), both Byte High Enable and Byte Low Enable are disabled (BHE, BLE HIGH), or during a write operation (CE LOW and WE LOW).
Parametrics
CY62147BV18LL-55BAI absolute maximum ratings: (1)storage temperature: –65°c to +150°c; (2)ambient temperature with; (3)power applied: –55°c to +125°c; (4)supply voltage to ground potential: –0.5v to vccmax + 0.5v; (5)dc voltage applied to outputs: in high z state[3]: –0.5v to vcc + 0.3v; dc input voltage[3]: -0.5v to vcc + 0.3v.; (6)output current into outputs (low): 20 ma; (7)static discharge voltage: >2001v (per mil-std-883, method 3015); (8)latch-up Current: >200 ma.
Features
CY62147BV18LL-55BAI features: (1)high speed: 55 ns and 70 ns availability; (2)voltage range: cy62147cv25: 2.2v–2.7v; cy62147cv30: 2.7v–3.3v; cy62147cv33: 3.0v–3.6v.; (3)pin compatible with cy62147v; (4)ultra-low active power: typical active current: 1.5 ma @ f = 1 mhz; typical active current: 5.5 ma @ f = fmax (70 ns speed).; (5)low standby power; (6)easy memory expansion with ce and oe features; (7)automatic power-down when deselected; (8)cmos for optimum speed/power.
Diagrams
