Product Summary

The CY62256LL-70SNXC is a high-performance CMOS static RAM. The CY62256LL-70SNXC is organized as 32 K words by 8 bits. Easy memory expansion of the CY62256LL-70SNXC is provided by an active LOW chip enable (CE) and active LOW output enable (OE) and three-state drivers. The CY62256LL-70SNXC has an automatic power-down feature, reducing the power consumption by 99.9% when deselected.

Parametrics

CY62256LL-70SNXC absolute maximum ratings: (1)Storage Temperature: –65 to +150 ℃; (2)Ambient Temperature with Power Applied: 55 to +125 ℃; (3)Supply Voltage to Ground Potential: –0.5 V to +7.0 V; (4)DC Voltage Applied to Outputs in High Z State: –0.5 V to VCC + 0.5 V; (5)DC Input Voltage: –0.5 V to VCC + 0.5 V; (6)Output Current into Outputs (LOW): 20 mA; (7)Static Discharge Voltage: >2001 V; (8)Latch-Up Current: >200 mA.

Features

CY62256LL-70SNXC features: (1)High speed: 55 ns; (2)Temperature ranges: 0 to 70 ℃; (3)Voltage range: 4.5 V to 5.5 V; (4)Low active power and standby power; (5)Easy memory expansion with CE and OE features; (6)TTL-compatible inputs and outputs; (7)Automatic power-down when deselected; (8)CMOS for optimum speed/power; (9)Packages available in a Pb-free and non Pb-free standard 28-pin narrow SOIC.

Diagrams

CY62256LL-70SNXC block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
CY62256LL-70SNXC
CY62256LL-70SNXC


IC SRAM 256KBIT 70NS 28SOIC

Data Sheet

Negotiable 
CY62256LL-70SNXCT
CY62256LL-70SNXCT


IC SRAM 256KBIT 70NS 28SOIC

Data Sheet

Negotiable