CY7C109B-20VC

CY7C109B-20VC, high-performance CMOS Static RAM, –0.5 V to +7.0 V, 20 mA, SOJ, Cypress Semiconductor

Rated 5 Rating 5 | reviews | Write a review

Price:: US $2.35~2.68 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
100 ~ 500 :	2.68 / Piece
500 ~ 1000 :	2.50 / Piece
1000 ~ 1500 :	2.35 / Piece

PartNumber:: CY7C109B-20VC

Brand:: Cypress Semiconductor - Cypress | Pack: SOJ | D/C: 00+

Availability:: Supply Ability: 10000/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

Place Order via Escrow Service

Not exactly what you want? Post a quick Buying Request!

Sold By

Mr. harry's store

(Hong Kong)

100% Positive feedback

Detailed seller ratings

Visit Store

Contact Now

Esrcow Service

Place orders confidently and securely via it

Safe payments
Quick and easy transactions
Free service charges

Learn More >>

Previous Next

Products Upload time: 2013-10-25

From Other Seller

Part Number:CY7C109B-20VC
US $2.35 - 2.68
Quantity:

piece

Product Summary

The CY7C109B-20VC is a high-performance CMOS Static RAM. The CY7C109B-20VC is organized as 131,072 words by 8 bits. Easy memory expansion of the CY7C109B-20VC is provided by an active LOW Chip Enable (CE), an active LOW Output Enable (OE), and three-state drivers. Writing to the CY7C109B-20VC is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins.

Parametrics

CY7C109B-20VC absolute maximum ratings: (1)Storage Temperature: –65 to +150 ℃; (2)Ambient Temperature with Power Applied: –55 to +125 ℃; (3)Supply Voltage on VCC to Relative GND[2]: –0.5 V to +7.0 V; (4)DC Voltage Applied to Outputs[2] in High Z State: –0.5 V to VCC + 0.5 V; (5)DC Input Voltage[2]: –0.5 V to VCC + 0.5 V; (6)Current into Outputs (LOW): 20 mA; (7)Static Discharge Voltage: ＞2001V; (8)Latch-Up Current: ＞200 mA.

Features

CY7C109B-20VC features: (1)High speed: 12 ns; (2)Low active power: 495 mW; (3)Low CMOS standby power: 55 mW; (4)2.0V Data Retention; (5)Automatic power-down when deselected; (6)TTL-compatible inputs and outputs; (7)Easy memory expansion with CE and OE features.