Product Summary

The CY7C147B-166AC is a high-performance CMOS Static RAM. The CY7C147B-166AC is organized as 4096 words by 1 bit. Easy memory expansion of the CY7C147B-166AC is provided by an active LOW Chip Enable (CE) and three-state drivers. The CY7C147B-166AC has an automatic power-down feature, reducing the power consumption by 80% when deselected. Writing to the CY7C147B-166AC is accomplished by taking Chip Enable (CE) and Write Enable (WE) inputs LOW. Data on the eight I/O pins (I/O0 through I/O7) is then written into the location specified on the address pins.

Parametrics

CY7C147B-166AC absolute maximum ratings: (1)Storage Temperature: –65 to +150 ℃; (2)Ambient Temperature with Power Applied: –55 to +125 ℃; (3)Supply Voltage on VCC to Relative GND[2]: –0.5 V to +7.0 V; (4)DC Voltage Applied to Outputs[2] in High Z State: –0.5 V to 7.0 V; (5)DC Input Voltage[2]: –0.5 V to 7.0 V; (6)Current into Outputs (LOW): 20 mA; (7)Static Discharge Voltage: >2001V; (8)Latch-Up Current: >200 mA.

Features

CY7C147B-166AC features: (1)Automatic power-down when deselected; (2)CMOS for optimum speed/power; (3)High speed: 25 ns; (4)Low active power: 440 mW (commercial); (5)Low standby power: 110 mW; (6)TTL-compatible inputs and outputs; (7)Capable of withstanding greater than 2001V electro-static discharge.

Diagrams

CY7C147B-166AC block diagram