Product Summary
The CY7C199C-12VC is a high–performance CMOS AsynchronousSRAM. The CY7C199C-12VC is organized as 32K by 8 bits that supports anasynchronous memory interface. The CY7C199C-12VC features anautomatic power–down feature that significantly reducespower consumption when deselected.See the Truth Table in this datasheet for a completedescription of read and write modes. The CY7C199C-12VC is available in 28 DIP, 28 SOJ, and 28 TSOPI package(s).
Parametrics
CY7C199C-12VC absolute maximum ratings: (1)TSTG, Storage Temperature: –65 to +150 ℃; (2)TAMB, Ambient Temperature with Power Applied: –55 to +125 ℃VCC, Core Supply Voltage Relative to VSS: –0.5 to +7.0 V; (3)VIN, VOUT, DC Voltage Applied to any Pin Relative to VSS: –0.5 to VCC + 0.5 V; (4)IOUT, Output Short–Circuit Current: 20 mA; (5)VESD, Static Discharge Voltage: >2001 V; (6)ILU, Latch–up Current: >200 mA.
Features
CY7C199C-12VC features: (1)Fast access time: 12 ns, 15 ns, 20 ns, and 25 ns; (2)Wide voltage range: 5.0V ± 10% (4.5V to 5.5V); (3)CMOS for optimum speed/power; (4)TTL–compatible Inputs and Outputs; (5)Available in 28 DIP, 28 SOJ, and 28 TSOP I.; (6)2.0V Data Retention; (7)Low CMOS standby power; (8)Automated Power–down when deselected.
Diagrams
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![]() IC SRAM 256KBIT 12NS 28SOJ |
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![]() CY7C006A-20AXC |
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![]() SRAM 5V 16Kx8 COM Dual Port SRAM |
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