Product Summary
The FDD6612A N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. The FDD6612A has been optimized for low gate charge, low RDS( ON) , fast switching speed and extremely low RDS(ON) in a small package. Applications are DC/DC converter, Motor Drives.
Parametrics
FDD6612A absolute maximum ratings: (1)VDSS Drain-Source Voltage: 30 V; (2)VGSS Gate-Source Voltage: ±20 V; (3)ID Continuous Drain Current @TC=25°C: 30 A, @TA=25°C: 9.5A, Pulsed: 60A; (4)Power Dissipation @TC=25°C: 36W, @TA=25°C: 2.8W, @TA=25°C: 1.3 W; (5)TJ, TSTG Operating and Storage Junction Temperature Range: -55 to +175 °C.
Features
FDD6612A features: (1)30 A, 30 V RDS(ON)= 20 mW @ VGS = 10 V RDS(ON)= 28 mW @ VGS = 4.5 V; (2)Low gate charge; (3)Fast Switching; (4)High performance trench technology for extremely low RDS(ON).
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() FDD6612A |
![]() Fairchild Semiconductor |
![]() MOSFET 30V N-Ch PowerTrench |
![]() Data Sheet |
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Image | Part No | Mfg | Description | ![]() |
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Quantity | ||||||||||||
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![]() FDD6030BL |
![]() Fairchild Semiconductor |
![]() MOSFET 30V N-Ch PowerTrench |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() FDD6030L |
![]() Fairchild Semiconductor |
![]() MOSFET 30V N&P-Channel Power Trench |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() FDD6030L_Q |
![]() Fairchild Semiconductor |
![]() MOSFET 30V N&P-Channel Power Trench |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() FDD6035AL |
![]() Fairchild Semiconductor |
![]() MOSFET N-Ch PowerTrench Logic Level |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() FDD6035AL_Q |
![]() Fairchild Semiconductor |
![]() MOSFET N-Ch PowerTrench Logic Level |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() FDD6296 |
![]() Fairchild Semiconductor |
![]() MOSFET 30V N-Ch PowerTrench Fast Switching |
![]() Data Sheet |
![]() Negotiable |
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