(Hong Kong)
Product Summary
The GE28F128W30BD70 Wireless Flash Memory (W18) device with flexible multi-partition dual operation, provides high-performance asynchronous and synchronous burst reads. The GE28F128W30BD70 is an ideal memory for low-voltage burst CPUs. Combining high read performance with flash memorys intrinsic nonvolatility, the GE28F128W30BD70 eliminates the traditional system-performance paradigm of shadowing redundant code memory from slow nonvolatile storage to faster execution memory. It reduces the total memory requirement that increases reliability and reduces overall system power consumption and cost.
Parametrics
GE28F128W30BD70 absolute maximum ratings: (1)Temperature under bias: –25 °C to +85 °C; (2)Storage temperature: –65 °C to +125 °C; (3)Voltage on any signal (except VCC, VPP): –0.5 V to +2.5 V; (4)VPP voltage: –0.2 V to +10 V; (5)VCC voltage: –0.2 V to +2.5 V; (6)VCCQ voltage: –0.2 V to +2.5 V; (7)Output short circuit current: 100 mA.
Features
GE28F128W30BD70 features: (1)Absolute Write Protection with VPP at Ground; (2)Individual and Instantaneous Block Locking/Unlocking with Lock-Down Capability; (3)5 μs (typ.)Program and Erase Suspend Latency Time; (4)Flash Data Integrator (FDI)and Common Flash Interface (CFI)Compatible; (5)Programmable WAIT Signal Polarity; (6)Burst and Page Mode Reads in all Blocks, across all partition boundaries; (7)Burst Suspend Feature.
Diagrams
