IR2111PBF

IR2111PBF, MOSFET and IGBT driver, 600V, 1.0W, DIP

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Price:: US $0.61~3.14 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
100 ~ 500 :	3.14 / Piece
500 ~ 1000 :	1.82 / Piece
1000 ~ 1500 :	0.61 / Piece

PartNumber:: IR2111PBF

Brand:: International Rectifier - IR | Pack: DIP | D/C: 05+

Availability:: Supply Ability: 10000/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-06-26

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Part Number:IR2111PBF
US $0.61 - 3.14
Quantity:

piece

Product Summary

The IR2111PBF is a high voltage, high speed power MOSFET and IGBT driver with dependent high and low side referenced output channels designed for half-bridge applications. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic input is compatible with standard CMOS outputs. The IR2111PBF features a high pulse current buffer stage designed for minimum driver cross-conduction. Internal deadtime is provided to avoid shoot-through in the output half-bridge. The floating channel of the IR2111PBF can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 600 volts.

Parametrics

IR2111PBF absolute maximum ratings: (1)VB, High Side Floating Supply Voltage: -0.3 to 625V; (2)VS, High Side Floating Supply Offset Voltage: VB - 25 to VB + 0.3V; (3)VHO, High Side Floating Output Voltage: VS - 0.3 to VB + 0.3V; (4)VCC, Low Side and Logic Fixed Supply Voltage: -0.3 to 25V; (5)VLO, Low Side Output Voltage: -0.3 to VCC + 0.3V; (6)VIN, Logic Input Voltage: -0.3 to VCC + 0.3V; (7)dVs/dt, Allowable Offset Supply Voltage Transient : 50 V/ns max; (8)PD, Package Power Dissipation @ TA≤+25℃: 1.0W max; (9)RθJA, Thermal Resistance, Junction to Ambien: 125W/℃ max; (10)TJ, Junction Temperature: 150℃ max; (11)TS, Storage Temperature: -55 150℃; (12)TL, Lead Temperature (Soldering, 10 seconds): 300℃.

Features

IR2111PBF features: (1)Floating channel designed for bootstrap operation Fully operational to +600V; Tolerant to negative transient voltage dV/dt immune; (2)Gate drive supply range from 10 to 20V; (3)Undervoltage lockout for both channels; (4)CMOS Schmitt-triggered inputs with pull-down; (5)Matched propagation delay for both channels; (6)Internally set deadtime; (7)High side output in phase with input.