Product Summary

The ir2113pbf is a high voltage, high speed power MOSFET and IGBT driver with independent high and low side referenced output channels. Logic inputs of the ir2113pbf are compatible with standard CMOS or LSTTL output, down to 3.3V logic. The output of the ir2113pbf features a high pulse current buffer stage designed for minimum driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in the high side configuration which operates up to 500 or 600 volts.


Parametrics

ir2113pbf absolute maximum ratings: (1) High side floating absolute voltage VB: -0.3 to 625V; (2) High side floating supply offset voltage Vs: VB-25 to VB+0.3V; (3) High side floating output voltage VHO: VS-0.3 to VB+0.3V; (4) Low side and logic fixed supply voltage: -0.3 to 25V; (5) Low side output voltage VLO: -0.3 to VCC +0.3V; (6) Allowable Offset Supply Voltage Transient dVs/dt: 50V/ns; (7) Junction Temperature Tj: 150°C; (8) Storage Temperature Ts: -55 to 150°C; (9) Lead Temperature (Soldering, 10 seconds) TL: 300°C.

Features

ir2113pbf features: (1) floating channel designed for bootstrap operation Fully operational to +500V or +600V Tolerant to negative transient voltage dV/dt immune; (2) Gate drive supply range from 10 to 20V; (3) Undervoltage lockout for both channels; (4) 3.3V logic compatible Separate logic supply range from 3.3V to 20V Logic and power ground ±5V offset; (5) CMOS Schmitt-triggered inputs with pull-down; (6) Cycle by cycle edge-triggered shutdown logic; (7) Matched propagation delay for both channels; (8) Outputs in phase with inputs.

Diagrams

IR2113PBF block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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0-1: $3.19
1-25: $1.96
25-100: $1.62
100-250: $1.55
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