Product Summary

The IRF9956TR is a power MOSFET. Fifth generation HEXFETs from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area.

Parametrics

IRF9956TR absolute maximum ratings: (1)Drain-Source Voltage: 30 V; (2)Gate-Source Voltage: ± 20 V; (3)Continuous Drain Current TA = 25°C: 3.5 A; (4)Continuous Drain Current TA = 70°C: 2.8 A; (5)Pulsed Drain Current IDM: 16 A; (6)Continuous Source Current (Diode Conduction): 1.7 A; (7)Maximum Power Dissipation TA = 25°C: 2.0 W; (8)Maximum Power Dissipation TA = 70°C: 1.3 W; (9)Single Pulse Avalanche Energy: 44 mJ; (10)Avalanche Current: 2.0 A; (11)Repetitive Avalanche Energy: 0.20 mJ; (12)Peak Diode Recovery dv/dt: 5.0 V/ ns; (13)Junction and Storage Temperature Range: -55 to + 150 °C.

Features

IRF9956TR features: (1)Generation V technology; (2)Ultra low on-resistance; (3)DuaN-channe MOSFET; (4)Surface mount; (5)Very low gate charge and switching losses; (6)Fully avalanche rated.

Diagrams

IRF9956TR pin connection

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
IRF9956TR
IRF9956TR


MOSFET 2N-CH 30V 3.5A 8-SOIC

Data Sheet

0-4000: $0.41
IRF9956TRPBF
IRF9956TRPBF

International Rectifier

MOSFET MOSFT DUAL NCh 30V 3.5A

Data Sheet

0-1: $0.68
1-25: $0.40
25-100: $0.25
100-250: $0.23