Product Summary

The IRFB3207 is a HEXFET power MOSFET. The applications of the IRFB3207 include High Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High Speed Power Switching, Hard Switched and High Frequency Circuits.

Parametrics

IRFB3207 absolute maximum ratings: (1)ID @ TC = 25℃, Continuous Drain Current, VGS @ 10V (Silicon Limited): 170 A; (2)ID @ TC = 100℃, Continuous Drain Current, VGS @ 10V (Silicon Limited): 120 A; (3)Pulsed Drain Current, IDM: 720 A; (4)PD @TC = 25℃, Maximum Power Dissipation: 300 W; (5)Linear Derating Factor: 2.0 W/℃; (6)Gate-to-Source Voltage, VGS: ±20 V; (7)Peak Diode Recovery, dv/dt: 5.8 V/ns; (8)Operating Junction and Storage Temperature Range, TJ, TSTG: -55 TO 175℃; (9)Soldering Temperature, for 10 seconds(1.6mm from case): 300℃; (10)Mounting torque, 6-32 or M3 screw: 10lb·in (1.1N·m).

Features

IRFB3207 features: (1)Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability; (4)Lead-Free.

Diagrams

 IRFB3207 circuit diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
IRFB3207
IRFB3207
International Rectifier
MOSFET N-CH 75V 180A TO-220AB
Data Sheet
1-150: $2.36
IRFB3207PBF
IRFB3207PBF
International Rectifier
MOSFET MOSFT 75V 180A 4.5mOhm 180nC
Data Sheet
0-1: $3.82
1-25: $2.61
25-100: $1.94
100-250: $1.85
IRFB3207ZGPBF
IRFB3207ZGPBF
International Rectifier
MOSFET MOSFT 75V 170A 4.1mOhm 120nC
Data Sheet
0-1: $2.46
1-25: $1.68
25-100: $1.25
100-250: $1.19
IRFB3207ZPBF
IRFB3207ZPBF
International Rectifier
MOSFET MOSFT 75V 170A 4.1mOhm 120nC Qg
Data Sheet
0-1: $2.34
1-25: $1.60
25-100: $1.19
100-250: $1.14
IRFB3207Z
IRFB3207Z
Other

Data Sheet
Negotiable