Product Summary
The IRFB4127PBF is a HEXFET Power MOSFET. The applications of it are High Efficiency Synchronous Rectification in SMPS, Uninterruptible Power Supply, High Speed Power Switching, Hard Switched and High Frequency Circuits.
Parametrics
IRFB4127PBF absolute maximum ratings: (1)Continuous Drain Current, VGS @ 10V: 76V; (2)ID @ TC = 100°C Continuous Drain Current, VGS @ 10V: 54 A; (3)IDM Pulsed Drain Current: 300A; (4)PD @TC = 25°C Maximum Power Dissipation: 375 W; (5)Linear Derating Factor: 2.5W/°C; (6)VGS Gate-to-Source Voltage: ±20V; (7)dv/dt Peak Diode Recovery: 57V/ns; (8)TJ Operating Junction and TSTG Storage Temperature Range: -55 to +175°C.
Features
IRFB4127PBF features: (1)Improved Gate, Avalanche and Dynamic dV/dt Ruggedness; (2)Fully Characterized Capacitance and Avalanche SOA; (3)Enhanced body diode dV/dt and dI/dt Capability; (4)Lead-Free.
Diagrams
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![]() International Rectifier |
![]() MOSFET MOSFT 200V 76A 20mOhm 100nC Qg |
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![]() MOSFET N-Chan 500V 11 Amp |
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![]() IRFB11N50APBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 11 Amp |
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![]() IRFB13N50A |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 14 Amp |
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![]() IRFB13N50APBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 14 Amp |
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![]() IRFB16N50K |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 17 Amp |
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![]() IRFB16N50KPBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 17 Amp |
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![]() Negotiable |
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