Product Summary
The IRFB4233PBF HEXFET power MOSFET is specifically designed for sustain; energe recovery & pass switch applications in plasma display panels. The IRFB4233PBF utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating.
Parametrics
IRFB4233PBF absolute maximum ratings: (1)Gate-to-Source Voltage: ±30V; (2)ID @ TC = 25°C Continuous Drain Current, VGS @ 10V: 56A; (3)ID @ TC = 100°C Continuous Drain Current, VGS @ 10V: 39A; (4)IDM Pulsed Drain Current: 220A; (5)IRP @ TC = 100°C Repetitive Peak Current: 114A; (6)PD @TC = 25°C Power Dissipation: 370W; (7)PD @TC = 100°C Power Dissipation: 190W; (8)Linear Derating Factor: 2.5W/°C; (9)TJ Operating Junction and TSTG Storage Temperature Range: -40 to +175°C.
Features
IRFB4233PBF features: (1)Advanced process technology; (2)Key parameters optimized for PDP Sustain, Energy Recovery and Pass Switch Applications; (3)Low EPULSE rating to reduce power dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications; (4)Low QG for fast response; (5)High repetitive peak current capability for reliable operation; (6)Short fall & rise times for fast switching; (7)175°C operating junction temperature for improved ruggedness; (8)Repetitive avalanche capability for robustness and reliability.
Diagrams
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![]() IRFB11N50A |
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![]() MOSFET N-Chan 500V 11 Amp |
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![]() IRFB13N50A |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 14 Amp |
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![]() IRFB13N50APBF |
![]() Vishay/Siliconix |
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![]() IRFB16N50K |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 17 Amp |
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![]() IRFB16N50KPBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 17 Amp |
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![]() Negotiable |
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