Product Summary
The IRFB4332PBF is a Power MOSFET. The IRFB4332PBF is specifically designed for Sustain; Energy Recovery Pass switch applications in Plasma Display Panels. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area and low EPULSE rating. Additional features of this MOSFET are 175℃ operating junction temperature and high repetitive peak current capability. These features of the IRFB4332PBF combine to make this MOSFET a highly efficient, robust and reliable device for PDP driving applications.
Parametrics
IRFB4332PBF absolute maximum ratings: (1)VGS Gate-to-Source Voltage: ±30 V; (2)ID @ TC = 25℃ Continuous Drain Current, VGS @ 10V: 60 A; (3)ID @ TC = 100℃ Continuous Drain Current, VGS @ 10V: 42A; (4)IDM Pulsed Drain Current : 2: 30A; (5)IRP @ TC = 100℃ Repetitive Peak Current: 120A; (6)PD @TC = 25℃ Power Dissipation: 390 W; (7)PD @TC = 100℃ Power Dissipation: 200W; (8)Linear Derating Factor: 2.6 W/℃; (9)TJ Operating Junction and TSTG Storage Temperature Range: -40 to + 175 ℃.
Features
IRFB4332PBF features: (1)Advanced Process Technology; (2)Key Parameters Optimized for PDP Sustain,; (3)Energy Recovery and Pass Switch Applications; (4)Low EPULSE Rating to Reduce Power; (5)Dissipation in PDP Sustain, Energy Recovery and Pass Switch Applications; (6)Low QG for Fast Response; (7)High Repetitive Peak Current Capability for Reliable Operation; (8)Short Fall & Rise Times for Fast Switching; (9)175℃ Operating Junction Temperature for Improved Ruggedness; (10)Repetitive Avalanche Capability for Robustness and Reliability.
Diagrams
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![]() IRFB16N50KPBF |
![]() Vishay/Siliconix |
![]() MOSFET N-Chan 500V 17 Amp |
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