(Hong Kong)
Product Summary
The lr401 is a silicon VDMOS and LDMOS transistor designed specially for broadband RF applications. The lr401 is suitable for militry radios, cellular and paging amplifier base stations, broadcast FM/AM, MRI, laser driver and others. The lr401 process features low feedback and output capacitances resulting in high F transistors with high input impedance and high efficiency.
Parametrics
lr401 absolute maximum ratings: (1) Total Device Dissipation: 230Watts; (2) Junction to Case Thermal Resistance: 0.75°C/W; (3) Maximum Junction Temperature: 200°C; (4) Storage Temperature: -65 to 150°C; (5) DC Drain Current: 13.5A; (6) Drain to Gate Voltage: 70V; (7) Drain to Source Voltage: 70V; (8) Gate to Source Voltage: 20V.
Features
lr401 features: (1) silicon gate enhancement mode; (2) RF power LDMOS transistor; (3) 130 watts push-pull; (4) high efficiency, linear; (5) high gain, low noise; (6) package style LR.
Diagrams
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| Image | Part No | Mfg | Description | |
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LR401 |
Other |
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Data Sheet |
Negotiable |
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LR4087B |
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