IXDD430CI

30 Amp, Low-Side Ultrafast, MOSFET / IGBT Driver, TO220-5, 40 V, Low Propagation Delay Time

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Price:: US $9.00~50.00 / piece [Get Latest Price]

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	US $9.00~50.00

PartNumber:: IXDD430CI

Brand:: IXYS Corporation - ixys | Pack: DIP | D/C: 09+

Availability:: Supply Ability: 10000/Week Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

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Products Upload time: 2011-08-17

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Product Summary

The IXDD430CI is a high speed high current gate driver specifically designed to drive MOSFETs and IGBTs to their minimum switching time and maximum practical frequency limits. The IXDD430CI can source and sink 30A of peak current while producing voltage rise and fall times of less than 30ns. The input of the driver is compatible with TTL or CMOS and are fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction/current shoot-through is virtually eliminated in all configurations. The features and wide safety margin in operating voltage and power make the IXDD430CI unmatched in performance and value.

Parametrics

IXDD430CI absolute maximum ratings: (1)Supply Voltage: 40 V; (2)All Other Pins: -0.3 V to VCC + 0.3 V; (3)Power Dissipation, TAMBIENT ≤25 ℃, TO220 (CI), TO263 (YI): 2W; (4)Derating Factors (to Ambient), TO220 (CI), TO263 (YI): 0.016W/℃; (5)Storage Temperature: -65 ℃ to 150 ℃; (6)Lead Temperature (10 sec): 300 ℃.

Features

IXDD430CI features: (1)Built using the advantages and compatibility of CMOS and IXYS HDMOSTM processes; (2)Latch-Up Protected; (3)High Peak Output Current: 30A Peak; (4)Wide Operating Range: 8.5V to 35V; (5)Under Voltage Lockout Protection; (6)Ability to Disable Output under Faults; (7)High Capacitive Load Drive Capability: 5600 pF in <25ns; (8)Matched Rise And Fall Times; (9)Low Propagation Delay Time; (10)Low Output Impedance; (11)Low Supply Current.