(Hong Kong)
Product Summary
The MCM69F819ZP11 is a 4M bit synchronous fast static RAM designed to providea burstable, high performance, secondary cache for the PowerPC™ and otherhigh performance microprocessors. It is organized as 256K words of 18 bitseach. This device integrates input registers, a 2–bit address counter, and highspeed SRAM onto a single monolithic circuit for reduced parts count in cachedata RAM applications. Synchronous design allows precise cycle control with theuse of an external clock (K).
Parametrics
MCM69F819ZP11 absolute maximum ratings: (1)power supply voltage, VCC: -0.3 to 7.0V; (2)voltage to any pin with respect to VSS, Vin, Vout: -0.5 to VCC+0.5V; (3)power dissipation, PD: 0.6W; (4)operating temeprature, TA: -40 to 85℃; (5)storage temperature, Tstg: -55 to 150℃.
Features
MCM69F819ZP11 features: (1)single 5V supply, ±10%; (2)32×8 organization; (3)fully static no clock or timing stobes necessary; (4)low poer dissipation: 27.5mW/MHz; (5)output enable and chip enable inputs for more system design flexibility and low power standby mode; (6)battery backup capability; (7)data retention supply voltage=2.0V to 5.5V; (8)all inputs and outputs are TTL compatible; (9)three state outputs; (10)fast access time.
Diagrams
