Product Summary
The MRF5S19060 is a RF power field effect transistor. It is designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz.
Parametrics
MRF5S19060 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5 to +65 Vdc; (2)Gate-Source Voltage VGS -0.5 to +15 Vdc; (3)Total Device Dissipation @ TC = 25°C: 218.8 W; (4)Total Device Dissipation Derate above 25°C: 1.25 W/°C; (5)Operating Junction Temperature: 2100℃; (6)Storage temperature: -65 to +175℃.
Features
MRF5S19060 features: (1)Typical 2- carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 12 Watts Avg., Full Frequency Band. IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF; (2)Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 12 Watts Avg; (3)Output Power; (4)Characterized with Series Equivalent Large-Signal Impedance Parameters; (5)Internally Matched for Ease of Use; (6)Integrated ESD Protection; (7)200℃ Capable Plastic Package; (8)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() MRF5S19060MBR1 |
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![]() MOSFET RF N-CH 28V 12W TO-272-4 |
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![]() MRF5S19060MR1 |
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![]() MOSFET RF N-CH 28V 12W TO-270-4 |
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![]() MRF5S19060NR1 |
![]() Freescale Semiconductor |
![]() Transistors RF MOSFET Power 1990MHZ 60W 28V TO270WB4N |
![]() Data Sheet |
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![]() MRF5S19060NBR1 |
![]() Freescale Semiconductor |
![]() Transistors RF MOSFET Power 1990MHZ 60W 28V TO272WB4N |
![]() Data Sheet |
![]() Negotiable |
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