Product Summary

The MRF5S19060 is a RF power field effect transistor. It is designed for broadband commercial and industrial applications with frequencies from 1930 to 1990 MHz.

Parametrics

MRF5S19060 absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5 to +65 Vdc; (2)Gate-Source Voltage VGS -0.5 to +15 Vdc; (3)Total Device Dissipation @ TC = 25°C: 218.8 W; (4)Total Device Dissipation Derate above 25°C: 1.25 W/°C; (5)Operating Junction Temperature: 2100℃; (6)Storage temperature: -65 to +175℃.

Features

MRF5S19060 features: (1)Typical 2- carrier N-CDMA Performance: VDD = 28 Volts, IDQ = 750 mA, Pout = 12 Watts Avg., Full Frequency Band. IS-95 (Pilot, Sync, Paging, Traffic Codes 8 Through 13) Channel Bandwidth = 1.2288 MHz. PAR = 9.8 dB @ 0.01% Probability on CCDF; (2)Capable of Handling 5:1 VSWR, @ 28 Vdc, 1990 MHz, 12 Watts Avg; (3)Output Power; (4)Characterized with Series Equivalent Large-Signal Impedance Parameters; (5)Internally Matched for Ease of Use; (6)Integrated ESD Protection; (7)200℃ Capable Plastic Package; (8)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.

Diagrams

MRF5S19060 dimension figure

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF5S19060MBR1
MRF5S19060MBR1

MOSFET RF N-CH 28V 12W TO-272-4
Data Sheet
0-500: $22.61
MRF5S19060MR1
MRF5S19060MR1

MOSFET RF N-CH 28V 12W TO-270-4
Data Sheet
0-500: $22.61
MRF5S19060NR1
MRF5S19060NR1
Freescale Semiconductor
Transistors RF MOSFET Power 1990MHZ 60W 28V TO270WB4N
Data Sheet
0-358: $23.77
358-500: $22.57
MRF5S19060NBR1
MRF5S19060NBR1
Freescale Semiconductor
Transistors RF MOSFET Power 1990MHZ 60W 28V TO272WB4N
Data Sheet
Negotiable