Product Summary

The MT55L256V18P1T-7.5 is a be fore Micron Technology 8MB ZBT SRAM. The MT55L256V18P1T-7.5 family employs high-speed, low-power CMOS designs using an advanced CMOS process.

Parametrics

MT55L256V18P1T-7.5 absolute maximum ratings: (1)Voltage on VDD Supply Relative to VSS: -0.5V to +4.6V; (2)Voltage on VDDQ Supply Relative to VSS: -0.5V to VDD; (3)VIN: -0.5V to VDDQ + 0.5V; (4)Storage Temperature (plastic): -55°C to +150°C; (5)Storage Temperature (FBGA : -55°C to +125°C; (6)Junction Temperature : +150°C; (7)Short Circuit Output Current: 100mA.

Features

MT55L256V18P1T-7.5 features: (1)High frequency and 100 percent bus utilization; (2)Fast cycle times: 6ns, 7.5ns and 10ns; (3)Single +3.3V ±5% power supply (VDD); (4)Separate +3.3V or +2.5V isolated output buffer supply (VDDQ); (5)Advanced control logic for minimum control signal interface; (6)Individual BYTE WRITE controls may be tied LOW; (7)Single R/W (read/write)control pin; (8)CKE pin to enable clock and suspend operations; (9)Three chip enables for simple depth expansion; (10)Clock-controlled and registered addresses, data I/Os and control signals.

Diagrams

MT55L256V18P1T-7.5 pin connection