(Hong Kong)
Product Summary
The R1RP0408DGE-2PR is a 4-Mbit high speed static RAM organized 512-k word × 8-bit. It has realized high speed access time by employing CMOS process (6-transistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed, high density memory and wide bit width configuration, such as cache and buffer memory in system. It is packaged in 400-mil 36-pin plastic SOJ.
Parametrics
R1RP0408DGE-2PR absolute maximum ratings: (1)Supply voltage relative to VSS: -0.5 to +7.0 V; (2)Voltage on any pin relative to VSS: -0.5 to VCC+0.5 V; (3)Power dissipation: 1.0 W; (4)Operating temperature: 0 to +70 °C; (5)Storage temperature: -55 to +125 °C; (6)Storage temperature under bias: -10 to +85 °C.
Features
R1RP0408DGE-2PR features: (1)Single 5.0 V supply: 5.0 V +/-10%; (2)Access time: 12 ns (max); (3)Completely static memory: No clock or timing strobe required; (4)Equal access and cycle times; (5)Directly TTL compatible All inputs and outputs; (6)Operating current: 130 mA (max); (7)TTL standby current: 40 mA (max); (8)CMOS standby current : 5 mA (max): 1.0 mA (max) (L-version); (9)Data retention current: 0.5 mA (max) (L-version); (10)Data retention voltage: 2 V (min) (L-version); (11)Center VCC and VSS type pin out.
Diagrams
