SGB15N60HS

high speed IGBT, NPT-technology, P-TO263-3-2, 600 V, Infineon Technologies

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Price:: US $0.10~100.00 / piece [Get Latest Price]

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PartNumber:: SGB15N60HS

Brand:: Infineon Technologies AG - Infineon | Pack: DIP | D/C: 10+

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Products Upload time: 2011-08-18

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Part Number:SGB15N60HS
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Product Summary

The SGB15N60HS is a high speed IGBT in NPT-technology.

Parametrics

SGB15N60HS maximum ratings: (1)Collector-emitter voltage, VCE: 600 V; (2)DC collector current: IC=27A at TC = 25℃; IC=15A at TC = 100℃; (3)Pulsed collector current, tp limited by Tjmax, ICpuls: 60; (4)Turn off safe operating area VCE ≤ 600V, Tj ≤ 150℃: 60A; (5)Gate-emitter voltage: static, VGE: ±20v; transient (tp<1μs, D<0.05): ±30v; (6)Short circuit withstand time VGE = 15V, VCC ≤ 400V, Tj ≤ 150℃, tSC: 10 μs; (7)Power dissipation at TC = 25℃, Ptot: 138 W; (8)Operating junction and storage temperature, Tj ,Ts tg: -55 to +150℃; (9)Time limited operating junction temperature for t < 150h Tj ( t l ): 175℃; (10)Soldering temperature (reflow soldering, MSL1): - 220 ℃.

Features

SGB15N60HS features: (1)30% lower Eoff compared to previous generation; (2)Short circuit withstand time: 10us; (3)Designed for operation above 30 kHz; (4)NPT-Technology for 600V applications offers: parallel switching capability; moderate Eoff increase with temperature; very tight parameter distribution; (5)High ruggedness, temperature stable behaviour; (6)Qualified according to JEDEC1 for target applications; (7)Complete product spectrum and PSpice Models.