Product Summary
The SI4926DY is an asymmetrical dual N-Channel 30-V (D-S) MOSFET.
Parametrics
SI4926DY absolute maximum ratings: (1)Drain-source voltage: 30 V; (2)Gate-Source voltage: 20 V; (3)Drain current - continuous: 4.2 to 10.5 A; (4)Pulsed drain current: 30 or 40A; (5)Continuous source current (diode conduction): 1.3, 0.9, 2.2, 1.15 A; (6)Maximum power dissipation: 0.64 to 2.4 W; (7)Operating junction and storage temperature range: –55 to 150 °C.
Diagrams
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![]() SI4926DY |
![]() Vishay/Siliconix |
![]() MOSFET 30V 6.3/10.5A |
![]() Data Sheet |
![]() Negotiable |
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![]() Si4900DY |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() SI4900DY-T1-E3 |
![]() Vishay/Siliconix |
![]() MOSFET 60V 5.3A 3.1W |
![]() Data Sheet |
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![]() SI4900DY-T1-GE3 |
![]() Vishay/Siliconix |
![]() MOSFET 60V 5.3A 3.1W 58mohm @ 10V |
![]() Data Sheet |
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![]() Si4904DY |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() SI4904DY-T1-E3 |
![]() Vishay/Siliconix |
![]() MOSFET 40V 8.0A 3.25W |
![]() Data Sheet |
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![]() SI4904DY-T1-GE3 |
![]() Vishay/Siliconix |
![]() MOSFET 40V 8.0A 3.25W 16mohm @ 10V |
![]() Data Sheet |
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