(Hong Kong)
Product Summary
The SST28SF040-120-4I-EH is a 4 Mbit (512K x8) SuperFlash EEPROM. It is suited for applications that require reprogrammable nonvolatile mass storage of program, configuration, or data memory. This device is manufactured using SST’s proprietary, high performance CMOS SuperFlash EEPROM Technology. The split-gate cell design and thick oxide tunneling injector attain better reliability and manufacturability compared with alternative approaches. The SST28SF040-120-4I-EH significantly improve performance and reliability, while lowering power consumption when compared with floppy diskettes or EPROM approaches.
Parametrics
SST28SF040-120-4I-EH absolute maximum ratings: (1)Temperature Under Bias: -55°C to +125°C; (2)Storage Temperature: -65°C to +150°C; (3)D. C. Voltage on Any Pin to Ground Potential: -0.5V to VDD + 0.5V; (4)Transient Voltage (<20 ns) on Any Pin to Ground Potential: -1.0V to VDD + 1.0V; (5)Voltage on A9 Pin to Ground Potential: -0.5V to 14.0V; (6)Package Power Dissipation Capability: 1.0 W; (7)Through Hold Lead Soldering Temperature (10 Seconds): 300°C; (8)utput Short Circuit Current: 100 mA.
Features
SST28SF040-120-4I-EH features: (1)Endurance: 100,000 Cycles (typical); (2)Greater than 100 years Data Retention; (3)Memory Organization: 512K x8; (4)Sector-Erase Capability: 256 Bytes per Sector; (5)Low Power Consumption; (6)Byte-Program Time: 35 μs (typical); (7)Sector-Erase Time: 2 ms (typical); (8)Complete Memory Rewrite: 20 sec (typical); (9)Latched Address and Data; (10)Hardware and Software Data Protection: 7-Read-Cycle-Sequence Software Data Protection; (11)TTL I/O Compatibility; (12)JEDEC Standard; (13)Flash EEPROM Pinouts.
Diagrams
