Product Summary

The TIP36C is a complementary Silicon high-power transistor. And it can be used in general–purpose power amplifier and switching applications.

Parametrics

TIP36C absolute maximum ratings: (1)Collector–emitter voltage: 100 V; (2)Collector–base voltage: 100 V; (3)Emitter - base voltage: 180 A; (4)Collector current - continuous: 25 Adc; (5)Collector current - peak: 40 Adc; (6)Base current - continuous: 5.0 Adc; (7)Total power dissipation @ Tc=25°C: 125 W; (8)Total power dissipation derate above 25°C: 1.0 W/°C; (9)Operating and storage junction temperature range: -65 to +150°C.

Features

TIP36C features: (1)25 A Collector Current; (2)Low Leakage Current-ICEO= 1.0 mA @ 30 and 60 V; (3)Excellent DC Gain-hFE= 40 Typ @ 15 A; (4)High Current Gain Bandwidth Product= 3.0 min @ IC= 1.0 A, f= 1.0 MHz.

Diagrams

TIP36C dimension figure

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
TIP36C
TIP36C
STMicroelectronics
Transistors Bipolar (BJT) PNP Gen Pur Power
Data Sheet
0-1: $0.95
1-10: $0.89
10-100: $0.78
100-250: $0.70
TIP36CG
TIP36CG
ON Semiconductor
Transistors Bipolar (BJT) 25A 100V 125W PNP
Data Sheet
0-1: $1.63
1-25: $1.27
25-100: $1.01
100-500: $0.88
TIP36CP
TIP36CP
STMicroelectronics
Transistors Bipolar (BJT) COMPLMNTRY PWR TRANS
Data Sheet
Negotiable 
TIP36C-S
TIP36C-S
Bourns
Transistors Bipolar (BJT) 100V 25A PNP
Data Sheet
Negotiable 
TIP36CW
TIP36CW
STMicroelectronics
Transistors Bipolar (BJT) HIGH POWER TRANS
Data Sheet
0-1: $1.41
1-10: $1.06
10-100: $1.02
100-250: $0.88