Product Summary

The TIP36C is a complementary Silicon high-power transistor. And it can be used in general–purpose power amplifier and switching applications.

Parametrics

TIP36C absolute maximum ratings: (1)Collector–emitter voltage: 100 V; (2)Collector–base voltage: 100 V; (3)Emitter - base voltage: 180 A; (4)Collector current - continuous: 25 Adc; (5)Collector current - peak: 40 Adc; (6)Base current - continuous: 5.0 Adc; (7)Total power dissipation @ Tc=25°C: 125 W; (8)Total power dissipation derate above 25°C: 1.0 W/°C; (9)Operating and storage junction temperature range: -65 to +150°C.

Features

TIP36C features: (1)25 A Collector Current; (2)Low Leakage Current-ICEO= 1.0 mA @ 30 and 60 V; (3)Excellent DC Gain-hFE= 40 Typ @ 15 A; (4)High Current Gain Bandwidth Product= 3.0 min @ IC= 1.0 A, f= 1.0 MHz.

Diagrams

TIP36C dimension figure

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
TIP36CG
TIP36CG
ON Semiconductor
Transistors Bipolar (BJT) 25A 100V 125W PNP
Data Sheet
0-1: $1.63
1-25: $1.27
25-100: $1.01
100-500: $0.88
TIP36CW
TIP36CW
STMicroelectronics
Transistors Bipolar (BJT) HIGH POWER TRANS
Data Sheet
0-1: $1.41
1-10: $1.06
10-100: $1.02
100-250: $0.88
TIP36C-S
TIP36C-S
Bourns
Transistors Bipolar (BJT) 100V 25A PNP
Data Sheet
Negotiable 
TIP36CP
TIP36CP
STMicroelectronics
Transistors Bipolar (BJT) COMPLMNTRY PWR TRANS
Data Sheet
Negotiable 
TIP36C
TIP36C
STMicroelectronics
Transistors Bipolar (BJT) PNP Gen Pur Power
Data Sheet
0-1: $0.95
1-10: $0.89
10-100: $0.78
100-250: $0.70