Product Summary
The TIP41C is a complementary Silicon high-power transistor. And it can be used in general–purpose power amplifier and switching applications.
Parametrics
TIP41C absolute maximum ratings: (1)Collector–emitter voltage: 100 V; (2)Collector–base voltage: 100 V; (3)Emitter - base voltage: 5.0 Vdc; (4)Collector current - continuous: 6 Adc; (5)Collector current - peak: 10 Adc; (6)Base current - continuous: 2.0 Adc; (7)Total power dissipation @ Tc=25°C: 65 W; (8)Total power dissipation derate above 25°C: 0.52 W/°C; (9)Operating and storage junction temperature range: -65 to +150°C.
Features
TIP41C features: (1)Collector - emitter saturation voltage: VCE(sat) = 1.5 Vdc (Max) @ IC = 6.0 Adc; (2)Collector - mitter Sustaining Voltage: VCEO(sus) = 100 Vdc (Min); (3)High Current Gain - Bandwidth Product fT = 3.0 MHz (Min) @ IC = 500 mAdc; (4)Compact TO-220 AB Package.
Diagrams
Image | Part No | Mfg | Description | ![]() |
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![]() TIP41C |
![]() STMicroelectronics |
![]() Transistors Bipolar (BJT) NPN Gen Pur Power |
![]() Data Sheet |
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![]() TIP41C_F129 |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) NPN Epitaxial Sil |
![]() Data Sheet |
![]() Negotiable |
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![]() TIP41C_Q |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) |
![]() Data Sheet |
![]() Negotiable |
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![]() TIP41CE3 |
![]() Other |
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![]() Data Sheet |
![]() Negotiable |
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![]() TIP41CG |
![]() ON Semiconductor |
![]() Transistors Bipolar (BJT) 6A 100V 65W NPN |
![]() Data Sheet |
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![]() |
![]() TIP41CN |
![]() STMicroelectronics |
![]() Transistors Bipolar (BJT) NPN 100 Volt 6 Amp |
![]() Data Sheet |
![]() Negotiable |
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![]() |
![]() TIP41CTU |
![]() Fairchild Semiconductor |
![]() Transistors Bipolar (BJT) NPN Epitaxial Sil |
![]() Data Sheet |
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![]() |
![]() TIP41C-BP |
![]() Micro Commercial Components (MCC) |
![]() Transistors Bipolar (BJT) NPN 100V 6A 65W |
![]() Data Sheet |
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