(Hong Kong)
Product Summary
The TOSHIBA TLP250F consists of a GaA.As light emitting diode and a integrated photodetector. This unit is 8.lead DIP. TLP250F is suitable for gate driving circuit of IGBT or power MOS FET.
Parametrics
TLP250F absolute maixmum ratings: (1)Input threshold current: IF = 5mA (max.); (2)Supply current: 11mA (max.); (3)Supply voltage: 10~35V; (4)Output current: ±1.5A (max.); (5)Switching time: tpHL, tpLH = 0.5μs (max.); (6)Isolation voltage: 2500 Vrms (min.); (7)Maximum operating insulation voltage: 1140VPK; (8)Highest permissible over voltage: 6000VPK.
Features
TLP250F features: (1)Transistor Inverter; (2)Inverter For Air Conditionor; (3)IGBT Gate Drive; (4)Power MOS FET Gate Drive.
Diagrams
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 TLP250F |
Other |
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Data Sheet |
Negotiable |
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Other |
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Data Sheet |
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Data Sheet |
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Data Sheet |
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