H11F1

H11F1, photo FET optocoupler, 60V, 60mA, 100mW, DIP

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Price:: US $0.53~0.69 / piece [Get Latest Price]

Reference price:

Qty (lots)	Price/lot
100 ~ 500 :	0.69 / Piece
500 ~ 1000 :	0.61 / Piece
1000 ~ 1500 :	0.53 / Piece

PartNumber:: H11F1

Brand:: Fairchild Optoelectronics Group - Fairchild | D/C: 10+

Availability:: Supply Ability: 10000/Month Can Ship Immediately
Delivery: 10-15 Business Days (ships out within 3 Business days)

Quantity:: piece

Total Price:: US $0

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Products Upload time: 2013-09-04

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Part Number:H11F1
US $0.53 - 0.69
h11f1

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Product Summary

The h11f1 is a photo FET optocoupler. It consists of a Gallium-Aluminum-Arsenide IRED emitting diode coupled to a symmetrical bilateral silicon photo-detector. The detector is electrically isolated from the input and performs like an ideal isolated FET designed for distortion-free control of low level AC and DC analog signals. The h11f1 is mounted in dual in-line packages. The applications of the h11f1 include: Isolated variable attenuator, Automatic gain control, Active filter fine tuning/band switching, Isolated sample and hold circuit, Multiplexed, optically isolated A/D conversion.

Parametrics

H11F1 absolute maximum ratings: (1)TSTG Storage Temperature: -55 to +150℃; (2)TOPR Operating Temperature: -55 to +100℃; (3)TSOL Lead Solder Temperature: 260℃ for 10 sec; (4)IF Continuous Forward Current: 60mA; (5)VR Reverse Voltage: 5V; (6)IF(pk) Forward Current – Peak (10 μs pulse, 1% duty cycle): 1A; (7)PD LED Power Dissipation 25℃ Ambient: 100mW, Derate Linearly from 25℃: 1.33mW/℃.

Features

H11F1 features: (1)≤ 100Ω to ≥ 300 MΩ; (2)≥ 99.9% linearity; (3)≤ 15 pF shunt capacitance; (4)≥ 100 GΩ I/O isolation resistance; (5)Extremely low offset voltage; (6)60 Vpk-pk signal capability; (7)No charge injection or latch-up; (8)ton , toff ≤ 15 µS; (9)UL recognized (File #E90700); (10)VDE recognized (File #E94766): Ordering option 300 (e.g. H11F1.300).