Product Summary

The H11G1 is a photodarlington-type optically coupled optocoupler. The H11G1 has a gallium arsenide infrared emitting diode coupled with a silicon darlington connected phototransistor which has an integral base-emitter resistor to optimize elevated temperature characteristics. It is ideal for: (1)cmos logic interface; (2)telephone ring detector; (3)low input ttl interface; (4)power supply isolation; (5)replace pulse transformer.

Parametrics

H11G1 absolute maximum ratings: (1)storage temperature TSTG: -55 to +150 °C; (2)operating temperature topr: -55 to +100 °c; (3)lead solder temperature tsol: 260 for 10 sec °c; (4)total device power dissipation @ ta = 25°c pd: 260 mw derate above 25°c: 3.5 mw/°c; (5)input-output isolation voltage viso: 5300 vac(rms)emitter if: 60 ma; (6)forward input current reverse input voltage vr: 6.0 v; (7)forward current - peak (1μs pulse, 300pps)if(pk): 3.0 a; (8)led power dissipation @ ta = 25°c pd: 100 mw; derate above 25°c: 1.8 mw/°c.

Features

H11G1 features: (1)High BVCEO: Minimum 100 V for H11G1; Minimum 80 V for H11G2; Minimum 55 V for H11G3.; (2)High sensitivity to low input current; (3)Minimum 500 percent CTR at IF = 1 mA; (4)Low leakage current at elevated temperature (maximum 100 μA at 80°C); (5)Underwriters Laboratory (UL)recognized File# E90700.

Diagrams

H11G1 pin connection

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Quantity
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Data Sheet

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H11G1M
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Data Sheet

0-1: $0.41
1-25: $0.36
25-100: $0.32
100-250: $0.27
H11G1S
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Data Sheet

Negotiable 
H11G1SM
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Fairchild Semiconductor

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Data Sheet

0-1: $0.41
1-25: $0.36
25-100: $0.32
100-250: $0.27
H11G1SR2M
H11G1SR2M

Fairchild Semiconductor

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Data Sheet

0-1: $0.44
1-25: $0.39
25-100: $0.34
100-250: $0.30