(Hong Kong)
Product Summary
The BLF369 is a 500 W LDMOS RF Power transistor for broadcast transmitter applications and industrial applications in the HF/VHF band. The applications of the BLF369 include Communication transmitter applications in the UHF band, Industrial applications in the UHF band.
Parametrics
BLF369 absolute maximum ratings: (1)drain-source voltage: 65 V; (2)gate-source voltage: -0.5 to +13 V; (3)storage temperature: -65 to +150 ℃; (4)junction temperature: 200 ℃.
Features
BLF369 features: (1)Typical CW performance at 225 MHz, a drain-source voltage VDS of 32 V and a quiescent drain current IDq = 2 × 1.0 A: Load power PL = 500 W, Power gain Gp 3 18 dB, Drain efficiency hD = 60 %; (2)Advanced flange material for optimum thermal behavior and reliability; (3)Excellent ruggedness; (4)High power gain; (5)Designed for broadband operation (HF/VHF band); (6)Source on underside eliminates DC isolators, reducing common-mode inductance; (7)Easy power control; (8)Integrated ESD protection.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|
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 BLF369 |
NXP Semiconductors (founded by Philips) |
TRANSISTOR RF LDMOS SOT800 |
Data Sheet |
Negotiable |
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BLF369,112 |
NXP Semiconductors |
Transistors RF MOSFET Power RF LDMOS 65V 100A |
Data Sheet |
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