(Hong Kong)
Product Summary
The blf6g22-180pn is a 180W LDMOS power transistor for base station applications at frequencies from 2000MHz to 2200MHz. The applications are RF power amplifiers for W-CDMA base stations and multicarrier applications in the 2000 MHz to 2200 MHz frequency range.
Parametrics
blf6g22-180pn absolute maximum ratings: (1)VDS, drain-source voltage: 65V; (2)VGS, gate-source voltage: -0.5 to +13V; (3)Tstg, storage temperature: -65 to +150 °C; (4)Tcase, case temperature: 150 °C; (5)Tj, junction temperature: 225 °C.
Features
blf6g22-180pn features: (1)Typical 2-carrier W-CDMA performance at frequencies of 2110MHz and 2170MHz, a supply voltage of 32V and an IDq of 1600mA; (2)Easy power control; (3)integrated ESD protection; (4)Excellent ruggedness; (5)High efficiency; (6)Excellent thermal stability; (7)Designed for broadband operation (2000 MHz to 2200 MHz); (8)internally matched for ease of use; (9)Qualified up to a supply voltage of 32 V.
Diagrams
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 BLF6G22-180PN |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
Negotiable |
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BLF6G22-180PN,112 |
NXP Semiconductors |
Transistors RF MOSFET Power LDMOS TNS |
Data Sheet |
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BLF6G22-180PN,135 |
NXP Semiconductors |
Transistors RF MOSFET Power Pwr LDMOS transistor |
Data Sheet |
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