(Hong Kong)
Product Summary
The MGF0909A is a GaAs FET with an N-channel schottky gate, is designed for use in UHF band amplifiers. It is suitable for UHF Band power amplifiers.
Parametrics
MGF0909A absolute maximum ratings: (1)Gate to source voltage, VGSO: -15V; (2)Gate to drain voltage, VGDO: -15V; (3)Total power dissipation, PT: 27.3W; (4)Channel temperature, Tch: 175℃; (5)Storage temperature, Tstg: -65 to 175℃; (6)ID Drain current 5.0 A; (7)Reverse gate current, IGR: 15mA; (8)Forward gate current, IGF: 31.5mA.
Features
MGF0909A features: (1)High output power P1dB=38dBm(TYP.) @f=2.3GHz; (2)High power gain GLP=11dB(TYP.)@ f=2.3GHz, Pin=20dBm; (3)High power added efficiency hadd=45%(TYP.) @f=2.3GHz,P1dB=20dBm.
Diagrams
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 MGF0909A |
Other |
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Data Sheet |
Negotiable |
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| Image | Part No | Mfg | Description | |
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MGF0904A |
Other |
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Negotiable |
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MGF0906B |
Other |
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Negotiable |
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MGF0907B |
Other |
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Data Sheet |
Negotiable |
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MGF0909A |
Other |
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Data Sheet |
Negotiable |
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MGF0910A |
Other |
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Data Sheet |
Negotiable |
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MGF0911A |
Other |
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Data Sheet |
Negotiable |
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