(Hong Kong)
Product Summary
The MRF1946 an NPN silicon power transistor. It is designed for 12.5 volt large–signal power amplifiers in commercial and industrial equipment.
Parametrics
MRF1946 absolute maximum ratings: (1)Collector–Emitter Voltage VCEO: 16 Vdc; (2)Collector–Base Voltage VCBO: 36 Vdc; (3)Emitter–Base Voltage VEBO: 4.0 Vdc; (4)Collector Current — Continuous IC: 8.0 Adc; (5)Total Device Dissipation @ TA = 25℃ PD: 100Watts; Derate above 25℃: 0.57W/℃; (6)Storage Temperature Range Tstg: –65 to +150 ℃; (7)Junction Temperature TJ: 200 ℃.
Features
MRF1946 features: (1)High Common Emitter Power Gain; (2)Specified 12.5 V, 175 MHz Performance; Output Power = 30 Watts; Power Gain = 10 dB; Efficiency = 60%; (3)Diffused Emitter Resistor Ballasting; (4)Characterized to 220 MHz; (5)Load Mismatch at High Line and Overdrive Conditions.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF1946 |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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MRF1946A |
TriQuint Semiconductor |
RF Amplifier RF Bipolar Trans |
Data Sheet |
Negotiable |
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