(Hong Kong)
Product Summary
The mrf5s9101n is an N-Channel Enhancement-Mode Lateral MOSFET. Designed for broadband commercial and industrial applications with frequencies up to 500 MHz. The high gain and broadband performance of the mrf5s9101nbr1 makes it ideal for large - signal, common- source amplifier applications in 28 volt base station equipment.
Parametrics
mrf5s9101n absolute maximum ratings: (1)Drain-Source Voltage, VDSS: -0.5 to +65 Vdc; (2)Gate-Source Voltage, VGS: -0.5, +15 Vdc; (3)Storage Temperature Range, Tstg: - 65 to +150℃; (4)Operating Junction Temperature, (1,2) TJ: 200℃.
Features
mrf5s9101n features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)200℃ Capable Plastic Package; (6)RoHS Compliant; (7)In Tape and Reel. R1 Suffix = 500 Units per 44 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||
|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF5S9101NBR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power 100W 900MHZ26V |
Data Sheet |
Negotiable |
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MRF5S9101NR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power 100W 900MHZ26V |
Data Sheet |
Negotiable |
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