Product Summary

The MRF275G is a Power Field-Effect Transistor.

Parametrics

MRF275G absolute maximum ratings: (1)Drain–Source Voltage: VDSS: 65 Vdc; (2)Drain–Gate Voltage (RGS = 1.0 MΩ): VDGR: 65 Vdc; (3)Gate–Source Voltage: VGS: ±40 Vdc; (4)Drain Current — Continuous: ID: 26 Adc; (5)Total Device Dissipation: @ TC = 25°C: 400W, Derate above 25°C: 2.27W/°C; (6)Storage Temperature Range: Tstg: –65 to +150 °C; (7)Operating Temperature Range: TJ: 200 °C.

Features

MRF275G features: (1)Guaranteed Performance @ 500 MHz, 28 Vdc: Output Power: 150 Watts, Power Gain: 10 dB (Min), Efficiency: 50% (Min), 100% Tested for Load Mismatch at all Phase Angles with VSWR 30:1; (2)Overall Lower Capacitance @ 28 V: Ciss: 135 pF, Coss: 140 pF, Crss: 17 pF; (3)Simplified AVC, ALC and Modulation D.

Diagrams

MRF275G block diagram

Image Part No Mfg Description Data Sheet Download Pricing
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MRF275G
MRF275G

M/A-COM Technology Solutions

Transistors RF MOSFET Power 5-500MHz 150Watts 28Volt 10dB

Data Sheet

0-1: $99.41
1-10: $96.09
10-25: $92.78
25-50: $89.47
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MRF20030

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