Product Summary

The mrf282z is an N-Channel Enhancement-Mode Lateral MOSFET.

Parametrics

mrf282z absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +65 Vdc; (2)Gate-Source Voltage VGS: ±20 Vdc; (3)Total Device Dissipation @ TC = 25°C Derate above 25°C PD: 60W; (4)Storage Temperature Range Tstg: - 65 to +150 °C; (5)Case Operating Temperature TC: 150 °C; (6)Operating Junction Temperature TJ: 200 °C.

Features

mrf282z features: (1)Excellent Thermal Stability; (2)Characterized with Series Equivalent Large-Signal Impedance Parameters; (3)RoHS Compliant; (4)Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.

Diagrams

mrf282z block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF282ZR1
MRF282ZR1

Freescale Semiconductor

Transistors RF MOSFET Power RF PWR FET SOE PKG

Data Sheet

0-357: $20.51
357-500: $19.48
Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF20030
MRF20030

Other


Data Sheet

Negotiable 
MRF20030R
MRF20030R

Other


Data Sheet

Negotiable 
MRF20060
MRF20060

Other


Data Sheet

Negotiable 
MRF20060_1248487
MRF20060_1248487

Other


Data Sheet

Negotiable 
MRF20060R
MRF20060R

Other


Data Sheet

Negotiable 
MRF20060RS
MRF20060RS

Other


Data Sheet

Negotiable