(Hong Kong)
Product Summary
The mrf282z is an N-Channel Enhancement-Mode Lateral MOSFET.
Parametrics
mrf282z absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +65 Vdc; (2)Gate-Source Voltage VGS: ±20 Vdc; (3)Total Device Dissipation @ TC = 25°C Derate above 25°C PD: 60W; (4)Storage Temperature Range Tstg: - 65 to +150 °C; (5)Case Operating Temperature TC: 150 °C; (6)Operating Junction Temperature TJ: 200 °C.
Features
mrf282z features: (1)Excellent Thermal Stability; (2)Characterized with Series Equivalent Large-Signal Impedance Parameters; (3)RoHS Compliant; (4)Available in Tape and Reel. R1 Suffix = 500 Units per 12 mm, 7 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF282ZR1 |
Freescale Semiconductor |
Transistors RF MOSFET Power RF PWR FET SOE PKG |
Data Sheet |
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| Image | Part No | Mfg | Description | |
Pricing (USD) |
Quantity | ||||||||
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MRF20030 |
Other |
|
Data Sheet |
Negotiable |
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MRF20030R |
Other |
|
Data Sheet |
Negotiable |
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MRF20060 |
Other |
|
Data Sheet |
Negotiable |
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MRF20060_1248487 |
Other |
|
Data Sheet |
Negotiable |
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MRF20060R |
Other |
|
Data Sheet |
Negotiable |
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MRF20060RS |
Other |
|
Data Sheet |
Negotiable |
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