Product Summary

The MRF392 is a RF Line NPN silicon pulsh-pull RF power transistor designed primarily for wideband large–signal output and driver amplifier stages in the 30 to 500 MHz frequency range.

Parametrics

MRF392 absolute maximum ratings: (1)Collector–Emitter Voltage, VCEO: 30 Vdc; (2)Collector–Base Voltage, VCBO: 60 Vdc; (3)Emitter–Base Voltage, VEBO: 4.0 Vdc; (4)Collector Current-Continuous ,IC: 16 Adc; (5)Total Device Dissipation, PD: 270W at TC = 25℃; 1.54W/℃ at Derate above 25℃; (6)Storage Temperature Range, Tstg: –65 to +150℃; (7)Junction Temperature, TJ: 200℃.

Features

MRF392 features: (1)Specified 28 Volt, 400 MHz Characteristics: Output Power = 125 W; Typical Gain = 10 dB; Efficiency = 55% (Typ); (2)Built–In Input Impedance Matching Networks for Broadband Operation; (3)Push–Pull Configuration Reduces Even Numbered Harmonics; (4)Gold Metallization System for High Reliability; (5)100% Tested for Load Mismatch.

Diagrams

MRF392 block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)		 Quantity
MRF392
MRF392
M/A-COM Technology Solutions
Transistors RF Bipolar Power 100-400MHz 125Watts 28Volt Gain 10dB
Data Sheet
0-1: $52.20
1-10: $50.46
10-25: $48.72
25-50: $46.98
MRF392
MRF392
Other

Data Sheet
Negotiable