(Hong Kong)
Product Summary
The MRF6P9220H is a RF power field effect transistor. It is designed for CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cellular radio and WLL applications.
Parametrics
MRF6P9220H absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +68 Vdc; (2)Gate-Source Voltage VGS: -0.5, +12 Vdc; (3)Total Device Dissipation @ TC = 25℃ PD: 700W; Derate above 25℃ PD: 4W/℃ (4)Storage Temperature Range Tstg: -65 to +150 ℃; (5)Operating Junction Temperature TJ: 200℃; (6)CW Operation CW: 190W.
Features
MRF6P9220H features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)Lower Thermal Resistance Package; (6)Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications; (7)Low Gold Plating Thickness on Leads, 40μ Nominal.; (8)Pb-Free and RoHS Compliant; (9)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
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 MRF6P9220HR3 |
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MOSFET RF N-CH 28V 47W NI-860C3 |
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MRF6P9220HR5 |
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MOSFET RF N-CH 28V 47W NI-860C3 |
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