(Hong Kong)
Product Summary
The MRF6S19100H is a RF Power Field Effect Transistor. It is designed for N-CDMA base station applications with frequencies from 1930 to 1990 MHz. It is suitable for TDMA, CDMA and multicarrier amplifier applications. The MRF6S19100H is used in Class AB for PCN - PCS/cel lular radi o and WLL applications.
Parametrics
MRF6S19100H absolute maximum ratings: (1)Drain-Source Voltage: -0.5V to +68V; (2)Gate-Source Voltage: -0.5V to +12V; (3)Storage Temperature Range: -65℃ to +150℃; (4)Case Operating Temperature: 150℃; (5)Operating Junction Temperature: 200℃.
Features
MRF6S19100H features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications; (6)RoHS Compliant; (7)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF6S19100HR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 WCDMA 22W NI780H |
Data Sheet |
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MRF6S19100HR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 WCDMA 22W NI780H |
Data Sheet |
Negotiable |
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MRF6S19100HSR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 WCDMA 22W NI780HS |
Data Sheet |
Negotiable |
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MRF6S19100HSR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 WCDMA 22W NI780HS |
Data Sheet |
Negotiable |
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