Product Summary

The mrf6s19140h is a RF Power Field Effect Transistor. It is esigned for PCN and PCS base station applications with frequencies from 1930 to 1990 MHz. The mrf6s19140h is suitable for TDMA, CDMA and multicarrier amplifier applications. It is used in Class AB for PCN-PCS/cellular radio and WLL applications.

Parametrics

mrf6s19140h absolute maximum ratings: (1)Drain-Source Voltage:-0.5V to +68V; (2)Gate-Source Voltage:-0.5V to +12V; (3)Storage Temperature Range:-65℃ to +150℃; (4)Case Operating Temperature:150℃; (5)Operating Junction Temperature:225℃.

Features

mrf6s19140h features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)Optimized for Doherty Applications; (6)RoHS Compliant; (7)In Tape and Reel. R3 Suffix = 250 Units per 56 mm, 13 inch Reel.

Diagrams

mrf6s19140h block diagram

Image Part No Mfg Description Data Sheet Download Pricing
(USD)
Quantity
MRF6S19140HR3
MRF6S19140HR3

Freescale Semiconductor

Transistors RF MOSFET Power HV6 28V 29W LDMOS NI880H

Data Sheet

Negotiable 
MRF6S19140HR5
MRF6S19140HR5

Freescale Semiconductor

Transistors RF MOSFET Power HV6 28V 29W LDMOS NI880H

Data Sheet

Negotiable 
MRF6S19140HSR3
MRF6S19140HSR3

Freescale Semiconductor

Transistors RF MOSFET Power HV6 28V29W LDMOS NI880HS

Data Sheet

0-188: $41.08
188-250: $41.08
MRF6S19140HSR5
MRF6S19140HSR5

Freescale Semiconductor

Transistors RF MOSFET Power HV6 28V29W LDMOS NI880HS

Data Sheet

Negotiable