(Hong Kong)
Product Summary
The MRF6S21050L is an N-Channel Enhancement -Mode Lateral MOSFET. Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications. To be used in Class AB for PCN - PCS/cel lular radio and WLL applications.
Parametrics
MRF6S21050L absolute maximum ratings: (1)Drain-Source Voltage VDSS: -0.5, +68 Vdc; (2)Gate-Source Voltage VGS: -0.5, +12 Vdc; (3)Storage Temperature Range Tstg: - 65 to +150 °C; (4)Case Operating Temperature TC: 150 °C; (5)Operating Junction Temperature TJ: 225 °C.
Features
MRF6S21050L features: (1)Characterized with Series Equivalent Large-Signal Impedance Parameters; (2)Internally Matched for Ease of Use; (3)Qualified Up to a Maximum of 32 VDD Operation; (4)Integrated ESD Protection; (5)Designed for Lower Memory Effects and Wide Instantaneous Bandwidth Applications; (6)RoHS Compliant; (7)In Tape and Reel. R3 Suffix = 250 Units per 32 mm, 13 inch Reel.
Diagrams
| Image | Part No | Mfg | Description |  |
Pricing (USD) |
Quantity | ||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
 MRF6S21050LR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 W-CDMA 11.5W NI400L |
Data Sheet |
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MRF6S21050LR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 W-CDMA 11.5W NI400L |
Data Sheet |
Negotiable |
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|
MRF6S21050LSR3 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 W-CDMA 11.5W NI400LS |
Data Sheet |
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MRF6S21050LSR5 |
Freescale Semiconductor |
Transistors RF MOSFET Power HV6 W-CDMA 11.5W NI400LS |
Data Sheet |
Negotiable |
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